A dielectric composition includes one of BaTiO.sub.3, (Ba,Ca)(Ti,Ca)O.sub.3, (Ba,Ca)(Ti,Zr)O.sub.3, Ba(Ti,Zr)O.sub.3 and (Ba,Ca)(Ti,Sn)O.sub.3, as a main component, a first subcomponent including a rare earth element, and a second subcomponent including at least one of a variable valence acceptor element and a fixed valence acceptor element. When a sum of contents of the rare earth element is defined as DT and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0. In addition, a multilayer electronic component including the dielectric composition is provided.

A capacitor according to an embodiment of the present disclosure is provided with a capacitor body in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately laminated. The dielectric layers each includes crystal particles, grain boundaries and metal particles. An average particle size of the metal particles is smaller than an average particle size of the crystal particles and larger than an average width of interfacial grain boundaries among the grain boundaries. Observation of the longitudinal cross section of the dielectric layer shows that the metal particles are distributed along the width direction and the thickness direction of the dielectric layer.

A power storage device, containing two electrodes, and a plate-like crystal structure smectite-based clay film between the electrodes.

A ceramic electronic component that includes a ceramic insulator and a terminal electrode on a surface of the ceramic insulator. The ceramic insulator contains a crystalline material and an amorphous material. The terminal electrode contains a metal and an oxide. The crystalline material and the oxide contain, in common, at least one type of a metal element. An adjacent region in the ceramic insulator which surrounds the terminal electrode and has a thickness of 5 μm is higher in concentration of the metal element than a remote region which is distant from the terminal electrode by 100 μm and has a thickness of 5 μm.

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO.sub.3 and BaTiO.sub.3—AlO.sub.3 bi-layer thin films based on nanocrystalline BaTiO.sub.3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO.sub.3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.

A method of making capacitive device in or on a photodefinable glass substrate comprising: a first electrode comprising: one or more copper columns each with patterned or textured surfaces; and one or more rows of a Resistor Inductor Diode (RLD) in contact with the one or more copper columns, wherein the one or more rows of the RLD are tied together in parallel;

a dielectric material in contact with the one or more copper columns and in contact with the one or more rows of the RLD; and a second electrode comprising: one or more copper columns each with patterned or textured surfaces; and one or more rows or columns of the RLD in contact with the one or more copper columns, wherein the one or more rows or columns of the RLD are tied together in parallel.

The present invention includes a method of fabricating an integrated RF power condition capacitor with a capacitance greater than or equal to 1 of and less than 1 mm.sup.2, and a device made by the method.

A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO.sub.2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

A sandwich-structured dielectric material for pulse energy storage is provided as well as a preparation method thereof. Employing a sandwich structure and combining the properties of ceramic-glass materials prepares a high performance dielectric material for pulse energy storage, in which the ceramic dielectric is core-shell structured powder of Ba.sub.xSr.sub.1-xTiO.sub.3 coated with SiO.sub.2, and the glass material is alkali-free glass AF45, of which the chemical composition is 63% SiO.sub.2-12% BaO-16% B.sub.2O.sub.3-9% Al.sub.2O.sub.3. AF45 alkali-free glass paste is spin-coated on both sides of the ceramic and calcined to get a layer-structured material of glass-ceramic-glass.

A dielectric film layer structure and a fabricating method thereof are provided. The dielectric film layer structure at least has a first capacitor electrode, a dielectric layer, and a second capacitor electrode, wherein the dielectric layer includes two materials of SiNx and SiOx. In a place where voltage drop is relatively large, the dielectric layer is mainly made of SiNx, and in a place where the voltage drop is relatively small, the dielectric layer is mainly made of SiOx, thereby changing current for charging thin film transistors, reducing influence of the voltage drop, and improving uniformity of panel voltage output.