There is provided a resin composition that can greatly improve voltage endurance while ensuring high capacitance and excellent circuit adhesion, when used as the dielectric layer of a capacitor. This resin composition includes a binder component including bisphenol S, an epoxy resin curing agent having a phenolic hydroxyl group, and an epoxy resin; and a dielectric filler.

A multilayer ceramic radiofrequency mixer can include a first termination, a second termination, a third termination, and a fourth termination. A plurality of interleaved electrodes may include a first set of electrodes connected with the first termination, a second set of electrodes connected with the second termination, a third set of electrodes connected with the third termination, and a fourth set of electrodes connected with the fourth termination. A plurality of dielectric layers may be disposed between respective electrodes of the pluralities of interleaved electrodes. A dielectric constant of the plurality of dielectric layers may vary less than 10% in response to a DC bias voltage applied to the plurality of interleaved electrodes.

Provided is a dielectric body having a high dielectric constant and a change rate of the dielectric constant of 30% or less, in a temperature range from −50° C. to 350° C.

An inorganic substance contains an oxide crystal including A and M (the A being one or more of P, Ge, and V, and the M being one or more of Nb and Ta), wherein the dielectric constant is 500 or more. In the inorganic substance, the oxide crystal is one or more of PNb.sub.9O.sub.25, P.sub.2.5Nb.sub.18O.sub.50 and GeNb.sub.9O.sub.25, GeNb.sub.18O.sub.47, GeNb.sub.19.144O.sub.50, VNb.sub.9O.sub.25, VNb.sub.9O.sub.24.9, PTa.sub.9O.sub.25, GeTa.sub.9O.sub.25, VTa.sub.9O.sub.25, and solid solutions thereof.

Ceramic raw material powder includes: a main phase having a perovskite structure, wherein elements acting as a donor and an acceptor are solid-solved in B sites of the perovskite structure, wherein a first relationship of value A<value B is satisfied in a center region of each grain of the ceramic raw material powder; a second relationship of value A>value B is satisfied in a circumference region of each grain of the ceramic raw material powder, and value A in the second relationship gradually decreases from the circumference region to the center, wherein value A is a value of (concentration of the element acting as a donor)×(valence of the element acting as a donor−4), and value B is a value of (concentration of the element acting as an acceptor)×(4−valence of the element acting as an acceptor).

To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

Provided is a dielectric composition containing: a main component expressed by {Ba.sub.xSr.sub.(1-x)}.sub.mTa.sub.4O.sub.12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and magnesium. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO.sub.2, and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO.

The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: <Formula 1> (100-x-y)BaTiO.sub.3.xBiREO.sub.3.yABO.sub.3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0<x<50, 0<y<50, and 0<x+y<50 are satisfied.

A resin composition for use in a dielectric layer of a capacitor device or a capacitor-embedded printed circuit board is provided in which the resin composition can improve stability in capacitance and insulation properties of the capacitor device under high temperature and high humidity and ensures high adhesion of the dielectric layer to the device. The resin composition comprises a resin component and a dielectric filler. The resin component comprises an epoxy resin, an active ester resin, and an aromatic polyamide resin.

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
(1−x)K.sub.aNa.sub.bNbO.sub.3.xM(A.sub.cSb.sub.d)O.sub.3  [Formula 1] wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0<x<1, 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.

A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).