To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3  [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula Bi.sub.xZn.sub.yNb.sub.zO.sub.1.75+δ, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2.

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:

xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3   [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

In order to provide a dielectric composition having high relative permittivity at a wide range of temperatures, the main component of a dielectric composition includes strontium and tantalum.

Disclosed are apparatus and a method for providing an integrated multiterminal multilayer ceramic device that has three or more capacitive elements. Two of such capacitive elements may be in series, with a third in parallel. The integrated device may be packaged as an overmolded three leaded component, or can be mounted as SMD (surface mount device). The integrated device may also be combined with a separate varistor in a stacked arrangement of leaded components.

Disclosed herein are microelectronic assemblies with integrated perovskite layers, and related devices and methods. For example, in some embodiments, a microelectronic assembly may include an organic package substrate portion having a surface with a conductive layer, and a perovskite conductive layer on the conductive layer. In some embodiments, a microelectronic assembly may include an organic package substrate portion having a surface with a conductive layer, a perovskite conductive layer having a first crystalline structure on the conductive layer, and a perovskite dielectric layer having a second crystalline structure on the perovskite conductive layer. In some embodiments, the first and second crystalline structures have a same orientation.

Provided is a dielectric composition exhibiting a high specific dielectric constant and a high resistivity even when fired in a reducing atmosphere. The dielectric composition contains a composite oxide having a composition represented by (Sr.sub.xBa.sub.1-x).sub.yNb.sub.2O.sub.5+y, the crystal system of the composite oxide is tetragonal, and y in the composition formula is smaller than 1.

A thin-film capacitor includes an insulating base member, and a capacitance portion that is laminated on the insulating base member has a plurality of internal electrode layers which are laminated on the insulating base member and are provided in a lamination direction and dielectric layers which are sandwiched between the internal electrode layers. A relative dielectric constant of the dielectric layers is 100 or higher.

A dielectric ceramic composition that contains an oxide of A, R, and B and an oxide of Mn. The A is at least one selected from the group consisting of K and Na. The R is at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. The B is at least one selected from the group consisting of Nb and Ta. The molar ratio of the A:R:B:Mn is 2−x:1+x/3:5+y:z. The x, y, and z satisfy −0.3≤x≤0.6, −0.5≤y≤0.5, and 0.001≤z≤0.5, respectively.