A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5≤t≤0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7≤s≤0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0≤a≤1.0; an amount b of Si is 0.1≤b≤1.0; an amount c of Re is 0.5≤c≤10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990≤m≤1.050.

A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO.sub.3, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.

Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.

A dielectric composition includes a main phase and a Ca—Zr—Si—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Zr—Si—O segregation phase includes at least calcium, zirconium, and silicon. The Ca—Zr—Si—O segregation phase includes 0.12-0.50 parts by mol of zirconium, provided that a total of calcium, strontium, silicon, and zirconium included in the Ca—Zr—Si—O segregation phase is 1 part by mol.

A multilayer electronic component includes a body including a dielectric layer and internal electrodes having the dielectric layer interposed therebetween in a first direction and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include nickel (Ni) and dysprosium (Dy) and 0.02 at %≤C0≤5 at % in which C0 is an atomic percentage (at %) calculated by dividing a number of atoms of Dy by a sum of a number of atoms of Ni and Dy included in the internal electrode.

A multilayer ceramic capacitor includes a ceramic element body including ceramic layers and internal electrode layers, and a pair of external electrodes on both end surfaces of the ceramic element body so as to be electrically connected to the internal electrode layers. Each of the external electrodes includes a base electrode layer and a resin external electrode layer stacked on the base electrode layer. The resin external electrode layer includes a thermosetting resin and a metal powder and amine, isocyanate, epoxy, mercapto, and/or ureido silane coupling agents.

Disclosed are a dielectric ceramic includes a plurality of crystal grain bulks including a ceramic, and a grain boundary between the plurality of crystal grain bulks, wherein a dopant is segregated in the grain boundary.

A multi-layer ceramic electronic component includes a ceramic body including a multi-layer unit, a side margin, and ridges. The multi-layer unit includes a capacitance forming unit including ceramic layers laminated in a first direction and internal electrodes disposed between the ceramic layers, a cover that covers the capacitance forming unit in the first direction, and a side surface facing in a second direction orthogonal to the first direction. The side margin covers the side surface. The ridges are rounded and extend in a third direction orthogonal to the first and second directions. The capacitance forming unit includes a first region disposed at a center portion in the first direction, and a second region disposed between the cover and the first region, end portions of the internal electrodes in the second direction in the second region being positioned inward in the second direction relative to those in the first region.

A dielectric composition includes one of BaTiO.sub.3, (Ba,Ca) (Ti,Ca)O.sub.3, (Ba,Ca) (Ti,Zr)O.sub.3, Ba(Ti,Zr)O.sub.3 and (Ba,Ca) (Ti,Sn)O.sub.3, as a main component, a first subcomponent including a rare earth element, and a second subcomponent including at least one of a variable valence acceptor element and a fixed valence acceptor element. When a sum of contents of the rare earth element is defined as DT and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0. In addition, a multilayer electronic component including the dielectric composition is provided.

A multilayer capacitor includes a capacitor body including dielectric layers and first and second internal electrodes, the capacitor body having first to sixth surfaces, the first internal electrode being exposed through the third, fifth, and sixth surfaces, and the second internal electrode being exposed through the fourth, fifth, and sixth surfaces, a first side portion and a second side portion, respectively disposed on the fifth surface and the sixth surface of the capacitor body, and a first external electrode and a second external electrode, respectively connected to the third surface and the fourth surface of the capacitor body to be respectively connected to the first internal electrode and the second internal electrode. The first and second side portions include an acicular second phase including a glass including aluminum (Al) and silicon (Si), manganese (Mn), and phosphorus (P).