A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00-(s+t)Ba.sub.sCa.sub.t).sub.6.00-xR.sub.x(Ti.sub.1.00-aZr.sub.a).sub.x+2.00(Nb.sub.1.00-bTa.sub.b).sub.8.00-xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.30, 0.50s+t1.00, 1.50<x3.00, 0.20a1.00, and 0b1.00. At least one selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.

A multilayer component is disclosed. In an embodiment, a multilayer component includes a fully active stack comprising a plurality of dielectric layers, internal electrodes and two external electrodes arranged on opposite sides of the stack, wherein at least one portion of the internal electrode layers are coated.

A dielectric composition comprising a complex oxide represented by a general formula of A.sub.aB.sub.bC.sub.4O.sub.15+ and an oxide including aluminum, in which A at least includes Ba, B at least includes Zr, and C at least includes Nb, a is 2.50 or more and 3.50 or less, and b is 0.50 or more, and 1.50 or less.

A dielectric composition including a complex oxide represented by a general formula of A.sub.aB.sub.bC.sub.4O.sub.15+ as a main component, in which A at least includes Ba, B at least includes Zr, C at least includes Nb, a is 3.05 or more, and b is 1.01 or more.

A multilayer ceramic electronic component includes: a body part including dielectric layers and internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and external electrodes disposed on an outer surface of the body part and electrically connected to the internal electrodes. The dielectric layer includes grains including: a semiconductive or conductive grain core region containing a base material represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf, and a doping material including a rare earth element; and an insulating grain shell region enclosing the grain core region.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the composition, the composition containing a tungsten bronze type composite oxide represented by chemical formula (Sr.sub.1.00(s+t)Ba.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00(a+d)Zr.sub.aSi.sub.d).sub.x2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00, wherein R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d satisfy 0s1.00, 0t1.00, 0s+t1.00, 0x3.00, 0.01a0.98, 0b1.00, 0.02d0.15, and 0.03a+d1.00. At least one element selected from Mn, Mg, Co, V, W, Mo, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition including a tungsten bronze type composite oxide as a main component represented by (Ba.sub.1-xSr.sub.x).sub.aR.sub.bZr.sub.cTa.sub.dO.sub.30+0.5e in terms of an atomic ratio. In the dielectric composition, c=(2a+3b?10)?e and d=(20?2a?3b)+e are satisfied. R includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. In the dielectric composition, 0.000?x?0.500, 5.100?a?5.860, 0.000?b?0.100, and ?0.150?e?0.150 are satisfied.

A dielectric composite includes: at least one first dielectric material represented by Chemical Formula 1, and at least one second dielectric material represented by Chemical Formula 2, wherein the first dielectric material has at least one first crystal structure and the second dielectric material has a second crystal structure that is different from the first crystal structure, and the first dielectric material and the second dielectric material are agglomerated with each other,

A.sup.11.sub.1-xA.sup.12.sub.xB.sup.1.sub.2O.sub.6Chemical Formula 1

A.sup.21.sub.2(1-y)A.sup.22.sub.2yB.sup.2.sub.2O.sub.7.Chemical Formula 2

A multilayer ceramic capacitor includes: a multilayer chip in which each of dielectric layers and each of internal electrode layers are alternately stacked and are alternately exposed to two edge faces thereof; and external electrodes formed on the two edge faces; wherein: the external electrodes have a structure in which a plated layer is formed on a ground layer whose main component is a metal or an alloy, a thermal expansion coefficient of the metal being larger than that of a main ceramic component of the dielectric layer, the ground layer including a ceramic additive; outermost layers of the multilayer chip are cover layers whose main component is a main component of the dielectric layer; and thermal expansion coefficients satisfy a relationship of, the main component of the ground layer>the main component of the cover layers>the ceramic additive.