A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of A.sub.xB.sub.1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.

A ceramic dielectric including: a bulk dielectric including barium (Ba) and titanium (Ti); a ceramic nanosheet; and a composite dielectric of the bulk dielectric and the ceramic nanosheet.

A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00-(s+t)Ba.sub.sCa.sub.t).sub.6.00-xR.sub.x(Ti.sub.1.00-aZr.sub.a).sub.x+2.00(Nb.sub.1.00-bTa.sub.b).sub.8.00-xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.30, 0.50s+t1.00, 1.50<x3.00, 0.20a1.00, and 0b1.00. At least one selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200 C., and has small dielectric losses at 25 C. and 200 C., can be provided.

A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.

A multilayer component is disclosed. In an embodiment, a multilayer component includes a fully active stack comprising a plurality of dielectric layers, internal electrodes and two external electrodes arranged on opposite sides of the stack, wherein at least one portion of the internal electrode layers are coated.

A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. A dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70s1.00, 0t0.30, 0.70s+t1.00, 0x0.50, 0.10a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al arc contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the composition, the composition containing a tungsten bronze type composite oxide represented by chemical formula (Sr.sub.1.00-(s+t)Ba.sub.sCa.sub.t).sub.6.00-xR.sub.x(Ti.sub.1.00-(a+d)Zr.sub.aSi.sub.d).sub.x2.00(Nb.sub.1.00-bTa.sub.b).sub.8.00-xO.sub.30.00, wherein R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d satisfy 0s1.00, 0t1.00, 0s+t1.00, 0x3.00, 0.01a0.98, 0b1.00, 0.02d0.15, and 0.03a+d1.00. At least one element selected from Mn, Mg, Co, V, W, Mo, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.