The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.

A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.

A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

An apparatus having an asymmetric adjustable lens with a deformable optical element. The apparatus may also include one or more actuators coupled to a deformable element of the asymmetric adjustable lens in a direct-drive configuration such that (1) mechanical action of the one or more actuators applies force to the deformable optical element and (2) the force applied by the mechanical action of the one or more actuators changes an optical property of the asymmetric adjustable lens by deforming the deformable optical element. Various other devices, systems, and methods are also disclosed.

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO.sub.3 or LiNbO.sub.3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. The aluminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surface of the piezoelectric single crystal substrate with an angle θ, and the aluminum film or the film has a [−1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO.sub.3 or LiNbO.sub.3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. The aluminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surface of the piezoelectric single crystal substrate with an angle θ, and the aluminum film or the film has a [−1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.

A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

Various embodiments may provide an electromechanical responsive film. The electromechanical responsive film may include a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O). The composition may have a formula (Na.sub.xK.sub.y)NbO.sub.3-δ, wherein 0≤x<1, wherein 0≤y<1, and wherein 0<x+y<1. The composition may satisfy at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.

Various embodiments may provide an electromechanical responsive film. The electromechanical responsive film may include a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O). The composition may have a formula (Na.sub.xK.sub.y)NbO.sub.3-δ, wherein 0≤x<1, wherein 0≤y<1, and wherein 0<x+y<1. The composition may satisfy at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.