A temperature sensor arrangement (10), including a bandgap voltage generator (12), which is configured to provide an output voltage (V.sub.bg); at least one semiconductor junction (14) for temperature sensing, which is biased by a biasing current flowing through said semiconductor junction (14); and at least one poly-resistor (R.sub.b3) which is connected between the output (23) of the bandgap voltage generator (12) and the semiconductor junction (14), thereby providing said biasing current from the bandgap voltage generator (12) to the semiconductor junction (14).

A voltage stabilizer assembly includes a power supply, a device, and a voltage stabilizer. The device is connected to the power supply, wherein the device performance is affected based on the regulation of its power source. The voltage stabilizer is connected between the device and the power supply. The voltage stabilizer includes a low pass filter connected to an output of the power supply and a buffer receiving its input from the low pass filter, the buffer receiving power from the power supply, and the output of the buffer connected to the device.

A current reference circuit, comprises a main resistor, comprising: a first force contact terminal at a first end of the main resistor and coupled to a first metal-oxide-semiconductor (MOS) component; a second force contact terminal at a second end of the main resistor and coupled to a second MOS component; a first sense contact terminal coupled to one bipolar junction transistor (BJT); and a second sense contact terminal opposite the first sense contact by a length of the main resistor and coupled to another bipolar junction transistor, wherein the first and second sense contact terminals exchange a current reference independently of the first and second force contact terminals.

A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

A bandgap reference circuit includes first through fourth bipolar junction transistors (BJTs). The base and collector of the first BJT are shorted together. The second BJT is coupled to the first BJT via a first resistor. The base of the third BJT is coupled to the base of the first BJT. The base and collector of the fourth BJT are coupled together and also are coupled to the base of the second BJT. A second resistor is coupled to the fourth emitter of the fourth BJT. A third resistor is coupled to the second resistor and to the emitter of the second BJT. An operational amplifier has a first input coupled to the first resistor and the collector of the second BJT, a second input coupled to the emitter of the third BJT and the collector of the fourth BJT, and an output coupled to the collectors of the first and third BJTs.

According to an embodiment, an arithmetic device includes a comparator, M cross switches, and M coefficient circuits. The comparator compares a first voltage generated at a first comparison terminal and a second voltage generated at a second comparison terminal. The M cross switches are provided corresponding to the M input signals. The M coefficient circuits are provided corresponding to the M coefficients, and each includes a first constant current source and a second constant current source. Each of the M cross switches performs switching between a straight state and a reverse state. In each of the M coefficient circuits, the first constant current source is connected between a positive output terminal of the corresponding coefficient circuit and a reference potential, and the second constant current source is connected between a negative output terminal of the corresponding coefficient circuit and the reference potential.

A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

A method, system, and circuit for providing a bandgap voltage reference are provided. In an example, the method includes producing a first bandgap curve based at least in part on a first circuit, a second circuit, an operational amplifier, and one or more feedback resistors, where the first circuit corresponds to a first voltage that is complementary to absolute temperature (CTAT) and the second circuit corresponds to a second voltage that is proportional to absolute temperature (PTAT). The method also includes providing a temperature independent compensation to the first bandgap curve based at least in part on a bandgap device, a biasing circuit, and a resistor; providing a non-temperature compensation to the first bandgap curve based at least in part on an adjustable divider circuit; and generating a resulting bandgap curve from the first bandgap curve.

A reference generator system can include a PTAT circuit coupled to a signal supply node and configured to provide a voltage reference signal or a current reference signal that is based on a physical characteristic of one or more components of the PTAT circuit and a correction signal. The system can include a CTAT circuit coupled to the PTAT circuit and configured to provide the correction signal to the PTAT circuit. In an example, the reference generator system can be implemented at least in part using NMOS devices that comprise a portion of an indium gallium zinc oxide (IGZO) substrate.

According to an embodiment, an arithmetic device includes a comparator, M cross switches, and M coefficient circuits. The comparator compares a first voltage generated at a first comparison terminal and a second voltage generated at a second comparison terminal. The M cross switches are provided corresponding to the M input signals. The M coefficient circuits are provided corresponding to the M coefficients, and each includes a first constant current source and a second constant current source. Each of the M cross switches performs switching between a straight state and a reverse state. In each of the M coefficient circuits, the first constant current source is connected between a positive output terminal of the corresponding coefficient circuit and a reference potential, and the second constant current source is connected between a negative output terminal of the corresponding coefficient circuit and the reference potential.