Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/04
the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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H01L21/18
the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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H01L21/30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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H01L21/31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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H01L21/316
composed of oxides or glassy oxides or oxide based glass
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H01L21/31654
of semiconductor materials, e.g. the body itself
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H01L21/31658
by thermal oxidation, e.g. of SiGe
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H01L21/31666
of AIII BV compounds
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H01L21/31666

Method for oxidizing a substrate surface using oxygen
09837486 · 2017-12-05 · ·

A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Method for oxidizing a substrate surface using oxygen
10256290 · 2019-04-09 · ·

A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550? C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE
20180069074 · 2018-03-08 · ·

A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550 C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.