A capacitor structure and a method of manufacturing the same, and a memory are provided. The method includes the following operations. A substrate is provided. A first conductive structure with a shape of column is formed on the substrate. A second conductive structure is formed on the substrate. The second conductive structure surrounds the first conductive structure and is spaced with the first conductive structure. The first conductive structure and the second conductive structure together form a bottom electrode. A capacitor dielectric layer is formed. The capacitor dielectric layer covers the surface of the substrate and the surface of the bottom electrode. A top electrode covering the surface of the capacitor dielectric layer is formed.

An electrochemical device includes an electrochemical cell and an electric circuit. The electrochemical cell comprises a first solid component and a second solid component. The two solid components comprise same chemical elements but have different concentrations of at least one type of the chemical elements. A solid electrolyte is arranged between the two solid components. The solid electrolyte is a dielectric material. The electric circuit is connected to the electrochemical cell. The electrochemical cell may be operated according to a redox process, so as to exchange chemical elements of the at least one type between the first solid component and the second solid component and thereby change an electrical conductance of each of the two solid components.

The disclosure provides a method for processing a capacitive structure, and a semiconductor structure. The method for processing the capacitive structure includes the following steps: providing a substrate, forming a landing pad on a surface of the substrate, and etching the landing pad; forming a barrier layer on the surface of the substrate, the barrier layer covering the landing pad; etching the barrier layer to expose a part of the landing pad; forming a first dielectric layer on the surface of the substrate, the first dielectric layer covering the landing pad and the barrier layer; and etching the first dielectric layer and forming a capacitive contact plug.

An embodiment of the present invention provides a capacitor having a through hole structure and a manufacturing method therefor. The capacitor having the through hole structure includes: a baseboard having a through hole penetrating from an upper surface of the baseboard to a lower surface thereof; a first conductive layer formed on an internal surface of the through hole, and the upper surface of the baseboard, the lower surface thereof, or both the upper and lower surfaces thereof; a first dielectric layer formed on the first conductive layer; and a second conductive layer formed on the first dielectric layer.

A multilayer ceramic capacitor include: a ceramic body including first and second surfaces opposing each other and third and fourth surfaces connecting the first and second surfaces; a plurality of internal electrodes disposed inside the ceramic body and exposed to the first and second surfaces, the plurality internal electrodes each having one end exposed to the third or fourth surface; and first and second side margin portions disposed on sides of the internal electrodes exposed to the first and second surfaces. A dielectric composition of the first and second side margin portions is different from a dielectric composition of the ceramic body, and a dielectric constant of the first and second side margin portions is lower than a dielectric constant of the ceramic body.

A dielectric composition includes one of BaTiO.sub.3, (Ba,Ca) (Ti,Ca)O.sub.3, (Ba,Ca) (Ti,Zr)O.sub.3, Ba(Ti,Zr)O.sub.3 and (Ba,Ca) (Ti,Sn)O.sub.3, as a main component, a first subcomponent including a rare earth element, and a second subcomponent including at least one of a variable valence acceptor element and a fixed valence acceptor element. When a sum of contents of the rare earth element is defined as DT and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0. In addition, a multilayer electronic component including the dielectric composition is provided.

Power-electronic systems and components thereof such as electrical-energy storage apparatuses/subsystems in the form of supercapacitors and power-electronic apparatuses/subsystems are disclosed. A supercapacitor has a conductive or semi-conductive first metasurface layer, a conductive or semi-conductive second metasurface layer, and a dielectric layer sandwiched between the first and the second metasurface layers for electrically insulating the first metasurface layer from the second metasurface layer. An electrical power conversion apparatus has a first power conversion circuitry for converting a first portion of electrical power received from an electrical power source and outputting the converted electrical power via an output. The electrical power conversion apparatus also has one or more direct power transfer (DPT) channels electrically coupling to the first power conversion circuitry in parallel for bypassing the first power conversion circuitry and directing transferring a second portion of the electrical power received from the electrical power source to the output.

A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is less than or equal to 1.5 mol, based on 100 mol of Ti of the base material main ingredient, and a content of the Dy satisfies 0.7 mol<Dy<1.1 mol, based on 100 mol of Ti of the base material main ingredient.

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.

A semiconductor package includes a package substrate; a semiconductor die mounted on a top surface of the package substrate; a plurality of conductive elements disposed on a bottom surface of the package substrate; and a land-side silicon capacitor disposed on the bottom surface of the package substrate and surrounded by the plurality of conductive elements. The land-side silicon capacitor includes at least two silicon capacitor unit dies adjoined to each other with an integral scribe line region.