A front-end module comprises a low-dropout (LDO) voltage regulator, a reference current generator, and a power amplifier. The LDO voltage regulator, reference current generator, and power amplifier are integrated on a first semiconductor die.

A voltage regulator comprising a reference current generator coupled between a supply terminal and a reference terminal and configured to provide a reference current that is independent of an operating range of a supply voltage; and a regulator stage comprising: a current terminal configured to receive the reference current; a NMOS transistor having: a gate coupled to the current terminal; a drain coupled to the supply terminal; and a source coupled to an output terminal; a voltage reference circuit for providing a regulated output voltage coupled between the output terminal and the reference terminal, the voltage reference circuit comprising an output resistor coupled in series with a conduction channel of an output bipolar transistor arranged in a diode-connected configuration; an input bipolar transistor having: a conduction channel coupled between the current terminal and the reference terminal; and a base terminal coupled to a base terminal of the output bipolar transistor.

A curvature compensated bandgap circuit that is capable of matching best-in-class two (2) parts-per-million performance without over-temperature trimming. This improves performance metrics for precision voltage reference products without requiring individual device tuning during production thereof. A core bandgap circuit comprises a main operational amplifier having a second order bowed voltage response over temperature. A ptat circuit is coupled to the core bandgap circuit to provide a sigmoidal third order shape for the bandgap voltage.

A front-end module comprises a bias network including a current mirror, a junction temperature sensor, an n-bit analog-to-digital converter, an n-bit current source bank configured to automatically set reference current levels for one or more operating temperature regions, and a power amplifier. The bias network, junction temperature sensor, n-bit analog-to-digital converter, n-bit current source bank, and power amplifier are integrated on a first semiconductor die.

A current reference circuit, comprises a main resistor, comprising: a first force contact terminal at a first end of the main resistor and coupled to a first metal-oxide-semiconductor (MOS) component; a second force contact terminal at a second end of the main resistor and coupled to a second MOS component; a first sense contact terminal coupled to one bipolar junction transistor (BJT); and a second sense contact terminal opposite the first sense contact by a length of the main resistor and coupled to another bipolar junction transistor, wherein the first and second sense contact terminals exchange a current reference independently of the first and second force contact terminals.

The present disclosure provides a control circuit, a light source driving device and a display apparatus. The control circuit comprises a current source circuit configured to generate a current signal having a magnitude positively correlated with a temperature of a region where the control circuit is located; a conversion circuit coupled to the current source circuit and configured to convert the current signal generated by the current source circuit into a voltage signal; and a first comparison circuit coupled to the conversion circuit and configured to output a control signal for controlling brightness of a light source according to the voltage signal received from the conversion circuit, a magnitude of the control signal being negatively correlated with the temperature of the region where the control circuit is located, and the brightness of the light source being positively correlated with the magnitude of the control signal.

One example includes an reference voltage generator system. The system includes an amplifier configured to generate a reference voltage based on a respective input voltage provided at each of at least one input of the amplifier. The system also includes at least one input transistor that is coupled to the at least one input of the amplifier and is statically-biased to conduct a current to set an amplitude of the respective input voltage provided at each of the at least one input of the amplifier. Each of the at least one input transistor includes an input terminal that is coupled in series with an input resistor.

A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

A voltage regulator comprising a reference current generator coupled between a supply terminal and a reference terminal and configured to provide a reference current that is independent of an operating range of a supply voltage; and a regulator stage comprising: a current terminal configured to receive the reference current; a NMOS transistor having: a gate coupled to the current terminal; a drain coupled to the supply terminal; and a source coupled to an output terminal; a voltage reference circuit for providing a regulated output voltage coupled between the output terminal and the reference terminal, the voltage reference circuit comprising an output resistor coupled in series with a conduction channel of an output bipolar transistor arranged in a diode-connected configuration; an input bipolar transistor having: a conduction channel coupled between the current terminal and the reference terminal; and a base terminal coupled to a base terminal of the output bipolar transistor.

A bandgap reference voltage generating circuit includes a first current generator generating a first complementary-to-absolute temperature (CTAT) current and a first proportional-to-absolute temperature (PTAT) current, a second current generator generating a second CTAT current and a second PTAT current, and an output circuit outputting a reference voltage based on a difference between a first voltage based on the first CTAT current and the first PTAT current and a second voltage based on the second CTAT current and the second PTAT current, wherein the first CTAT current is cancelled by the second CTAT current.