A current reference circuit, comprises a main resistor, comprising: a first force contact terminal at a first end of the main resistor and coupled to a first metal-oxide-semiconductor (MOS) component; a second force contact terminal at a second end of the main resistor and coupled to a second MOS component; a first sense contact terminal coupled to one bipolar junction transistor (BJT); and a second sense contact terminal opposite the first sense contact by a length of the main resistor and coupled to another bipolar junction transistor, wherein the first and second sense contact terminals exchange a current reference independently of the first and second force contact terminals.

A voltage-current conversion circuit includes a voltage-current conversion resistor connected to an input terminal, and a current mirror circuit which mirrors a current supplied from the voltage-current conversion resistor, wherein the current mirror circuit is constructed to include a depletion-type transistor whose source voltage is biased to be higher than the substrate voltage.

A voltage-current conversion circuit includes a voltage-current conversion resistor connected to an input terminal, and a current mirror circuit which mirrors a current supplied from the voltage-current conversion resistor, wherein the current mirror circuit is constructed to include a depletion-type transistor whose source voltage is biased to be higher than the substrate voltage.

A switching regulator includes a power stage circuit and a control circuit. The power stage circuit operates a high-side switch and a low-side switch therein according to a high-side signal and a low-side signal respectively to generate an inductor current flowing through an inductor therein. The adjustment signal generation circuit in the control circuit generates an adjustment level according to the high-side signal, the low-side signal, and/or the inductor current, wherein the adjustment level is switched between a reverse recovery level and an anti-latch-up level, and is electrically connected to a low-side isolation region of the low-side switch. The reverse recovery level is lower than the input voltage. The anti-latch-up level is higher than the reverse recovery level to avoid a latch-up effect.

A switching regulator includes a power stage circuit and a control circuit. The power stage circuit operates a high-side switch and a low-side switch therein according to a high-side signal and a low-side signal respectively to generate an inductor current flowing through an inductor therein. The adjustment signal generation circuit in the control circuit generates an adjustment level according to the high-side signal, the low-side signal, and/or the inductor current, wherein the adjustment level is switched between a reverse recovery level and an anti-latch-up level, and is electrically connected to a low-side isolation region of the low-side switch. The reverse recovery level is lower than the input voltage. The anti-latch-up level is higher than the reverse recovery level to avoid a latch-up effect.

In a described example, a circuit includes a first bipolar junction transistor (BJT) having a first base, a first emitter and a first collector. A second BJT has a second base, a second emitter and a second collector, in which the first collector is coupled to the second collector. A bandgap core circuit has first and second core inputs and a bandgap output. The first core input is coupled to the first emitter, the second core input is coupled to the second emitter, and the first and second bases are coupled to the bandgap output.

An electronic device is provided, including: a terminal configured for receiving a bandgap voltage reference, generated by incorporating a first base-emitter voltage subject to process variation; the electronic device including a first transistor with a base configured to be exposed to the bandgap voltage reference; the first transistor is biased with a constant collector current corresponding with the first base-emitter voltage, and is configured for providing a shifted voltage, VE, based on decreasing the bandgap voltage reference by a second base-emitter voltage subject to the process variation; and the electronic device including a second transistor, of the same type as the first transistor, including an emitter configured to be exposed to the shifted voltage; and the second transistor is biased with a constant base current and is configured for providing a restored bandgap voltage based on increasing the shifted voltage by a third base-emitter voltage.

A current reference circuit, comprises a main resistor, comprising: a first force contact terminal at a first end of the main resistor and coupled to a first metal-oxide-semiconductor (MOS) component; a second force contact terminal at a second end of the main resistor and coupled to a second MOS component; a first sense contact terminal coupled to one bipolar junction transistor (BJT); and a second sense contact terminal opposite the first sense contact by a length of the main resistor and coupled to another bipolar junction transistor, wherein the first and second sense contact terminals exchange a current reference independently of the first and second force contact terminals.

An electronic device is provided, including: a terminal configured for receiving a bandgap voltage reference, generated by incorporating a first base-emitter voltage subject to process variation; the electronic device including a first transistor with a base configured to be exposed to the bandgap voltage reference; the first transistor is biased with a constant collector current corresponding with the first base-emitter voltage, and is configured for providing a shifted voltage, VE, based on decreasing the bandgap voltage reference by a second base-emitter voltage subject to the process variation; and the electronic device including a second transistor, of the same type as the first transistor, including an emitter configured to be exposed to the shifted voltage; and the second transistor is biased with a constant base current and is configured for providing a restored bandgap voltage based on increasing the shifted voltage by a third base-emitter voltage.